TSM100N06CZ C0G

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Overview of TSM100N06CZ C0G

Part NumberTSM100N06CZ C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 60V 100A TO220
DatasheetsDownload TSM100N06CZ C0G Datasheet PDFPDF Icon
Price for TSM100N06CZ C0G

Specification of TSM100N06CZ C0G

Status
Not For New Designs
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4382 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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